STMicroelectronics SCTWA90N65G2V-4 Typ N-Kanal, Oberfläche MOSFET Erweiterung 650 V / 119 A 656 W, 4-Pin Hip-247

Name: STMicroelectronics SCTWA90N65G2V-4 Typ N-Kanal, Oberfläche MOSFET Erweiterung 650 V / 119 A 656 W, 4-Pin Hip-247
Brand: STMICROELECTRONICS
Price: 24.86 EUR
Availability: OutOfStock

Marke: STMICROELECTRONICS

Hersteller Artikel-Nr.: SCTWA90N65G2V-4

Produkt-Nr.: P-CCZL2R

Technische Daten

Betriebstemperatur min.: -55°C
Channel-Modus: Erweiterung
Drain-Source-Spannung (Vds) max.: 650V
Drain-Source-Widerstand (Rds) max.: 24mΩ
Durchlassspannung (Vf): 2.5V
Gate-Ladung typisch (Qg) @ Vgs: 157nC
Gate-Source-spannung max (Vgs): 22 V
Gehäusegröße: Hip-247
Kabelkanaltyp: Typ N
kontinuierlicher Drainstrom max. (Id): 119A

Produktbeschreibung

The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.High speed switching performance Very high operating junction temperature capability Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Source sensing pin for increased efficiency