STMicroelectronics SCTL35N65G2V N-Kanal, SMD MOSFET 650 V / 40 A, 5-Pin PowerFLAT 8 x 8 HV

Name: STMicroelectronics SCTL35N65G2V N-Kanal, SMD MOSFET 650 V / 40 A, 5-Pin PowerFLAT 8 x 8 HV
Brand: STMICROELECTRONICS

Marke: STMICROELECTRONICS

Hersteller Artikel-Nr.: SCTL35N65G2V

Produkt-Nr.: P-CCZL2N

Technische Daten

Anzahl der Elemente pro Chip: 1
Channel-Modus: Enhancement
Channel-Typ: N
Dauer-Drainstrom max.: 40 A
Drain-Source-Spannung max.: 650 V
Drain-Source-Widerstand max.: 0.067 O
Gate-Schwellenspannung max.: 5V
Montage-Typ: SMD
Pinanzahl: 5
Serie: SCTL35N65G2V

Produktbeschreibung

Channel-Typ = N
Dauer-Drainstrom max. = 40 A
Drain-Source-Spannung max. = 650 V
Serie = SCTL35N65G2V
Montage-Typ = SMD
Pinanzahl = 5
Drain-Source-Widerstand max. = 0.067 O
Channel-Modus = Enhancement
Gate-Schwellenspannung max. = 5V
Anzahl der Elemente pro Chip = 1

The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.Very fast and robust intrinsic body diode Low capacitance Source sensing pin for increased efficiency