onsemi N-Kanal, THT MOSFET 650 V / 40 A 48 W, 3-Pin TO-220

Channel-Typ = N
Dauer-Drainstrom max. = 40 A
Drain-Source-Spannung max. = 650 V
Gehäusegröße = TO-220
Montage-Typ = THT
Pinanzahl = 3
Drain-Source-Widerstand max. = 82 mΩ
Channel-Modus = Enhancement
Gate-Schwellenspannung max. = 5V
Gate-Schwellenspannung min. = 3V
Verlustleistung max. = 48 W
Transistor-Konfiguration = Einfach
Gate-Source Spannung max. = ±30 V
Betriebstemperatur max. = +150 °Cmm
Diodendurchschlagsspannung = 1.3V

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.Features 700 V @ T_J = 150 oC Ultra Low Gate Charge (Typ. Qg = 70 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF) Optimized Capacitance Excellent body diode performance (low Qrr, robust body diode) Typ. RDS(on) = 70 mΩ Higher system reliability at low temperature operation Lower switching loss Lower switching loss Lower peak Vds and lower Vgs oscillation Higher system reliability in LLC and Phase shift full bridge Circuit Applications Telecommunication Cloud system Industrial End Products Telecom power Server power Solar / UPS EV charger